dmp2021ufdf document number: ds37195 rev. 3 - 2 1 of 7 www.diodes.com april 2015 ? diodes incorporated d mp2021ufdf advance information p-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c -20v 16m @ v gs = -4.5v -9.0a 22m @ v gs = -2.5v -7.7a description and applications this mosfet is designed to minimize on-state resist ance (r ds(on) ) and yet maintain superior switching performance, ma king it ideal for high-efficiency power management applications. ? battery management application ? power management functions ? dc-dc converters features and benefits ? 0.6mm profile ? ideal for low profile application s ? pcb footprint of 4mm 2 ? low gate threshold voltage ? low on-resistance ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliabilit y mechanical data ? case: u-dfn2020-6 ? case material: molded plastic, ?green? molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.007 grams (approximate) ordering information (note 4) part number case packaging DMP2021UFDF-7 u-dfn2020-6 3,000/tape & reel dmp2021ufdf-13 u-dfn2020-6 10,000/tape & reel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at htt p://www.diodes.com/products/packages.html. marking information date code key year 2014 2015 201 6 201 7 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d p1 = product type marking code ym = date code marking y = year (ex: c = 2015) m = month (ex: 9 = september) u-dfn2020-6 equivalent circuit pin1 bottom view top view pin out esd protected bottom view p1 y m ds g gate protection diode u-dfn2020-6 e4
dmp2021ufdf document number: ds37195 rev. 3 - 2 2 of 7 www.diodes.com april 2015 ? diodes incorporated d mp2021ufdf advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 6) v gs = -4.5v steady state t a = +25c t a = +70c i d -9.0 -7.2 a t<10s t a = +25c t a = +70c i d -11.1 -8.9 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -60 a continuous source-drain diode current (note 6) t a = +25c i s -2.4 a avalanche current (note 7) l = 0.1mh i a s -27 a avalanche energy (note 7) l = 0.1mh e a s 38 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0.73 w t a = +70c 0.47 thermal resistance, junction to ambient (note 5) steady state r ja 172 c/w t<10s 121 total power dissipation (note 6) t a = +25c p d 2.02 w t a = +70c 1.30 thermal resistance, junction to ambient (note 6) steady state r ja 63 c/w t<10s 42 thermal resistance, junction to case (note 6) stead y state r j c 18 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current t j = +25c i dss ? ? -1 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 8v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) -0.35 ? -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 12 16 m v gs = -4.5v, i d = -7.0a 15 22 v gs = -2.5v, i d = -5.0a 19 40 v gs = -1.8v, i d = -3.0a 21 80 v gs = -1.5v, i d = -1.0a diode forward voltage v sd ? -0.8 -1.2 v v gs = 0v, i s = -1.0a dynamic characteristic s (note 9 ) input capacitance c iss ? 2,760 ? pf v ds = -15v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 262 ? reverse transfer capacitance c rss ? 220 ? gate resistance r g ? 16 30 v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = -4.5v) q g ? 34 ? nc v ds = -15v, i d = -4.0a total gate charge (v gs = -8v) q g ? 59 ? gate-source charge q gs ? 3.5 ? gate-drain charge q gd ? 8.3 ? turn-on delay time t d(on) ? 7.5 ? ns v ds = -15v, v gs = -4.5v, r g = 1 , i d = -4.0a turn-on rise time t r ? 25 ? turn-off delay time t d(off) ? 125 ? turn-off fall time t f ? 96 ? reverse recovery time t rr ? 48 ? ns i f = -1.0a, di/dt = 100a/ s reverse recovery charge q rr ? 33 ? nc i f = -1.0a, di/dt = 100a/ s notes: 5. device mounted on fr-4 substrate pc board , 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz c opper, with 1-inch square copper plate. 7. i as and e as rating are based on low frequency and duty cycles to keep t j = +25c. 8. short duration pulse test used to minimize self- heating effect. 9. guaranteed by design. not subject to product tes ting.
dmp2021ufdf document number: ds37195 rev. 3 - 2 3 of 7 www.diodes.com april 2015 ? diodes incorporated d mp2021ufdf advance information v , drain -source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 v = -1.0v gs v = -1.2v gs v = -1.5v gs v = -4.0v gs v = -8.0v gs v = -4.5v gs v = -3.0v gs v = -2.0v gs v = -1.8v gs v = -0.9v gs v = -2.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 t = 150 c a t = 125 c a t = 85 c a t = 25 c a t = -55 c a v = -5.0v ds i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 v = -1.8v gs v = -4.5v gs v = -1.5v gs v = -2.5v gs i , drain source current (a) figure 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 2 4 6 8 10 12 14 16 18 t = -55 c a t = 25 c a t = 85 c a t = 125 c a t = 150 c a v = -4.5v gs 20 t , junction temperature ( c) j figure 5 on-resistance variation with temperature r , d r a i n - s o u r c e on-resistance (normalized) ds(on) 0.4 0.8 1.2 1.6 2 -50 -25 0 25 50 75 100 125 150 v = -1.8v i = -5a gs d v = -2.5v i = -10a gs d t , junction temperature ( c) j figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0 0.01 0.02 0.03 0.04 -50 -25 0 25 50 75 100 125 150 v = -2.5v i = a gs d -10 v = v i = a gs d -1.8 -5
dmp2021ufdf document number: ds37195 rev. 3 - 2 4 of 7 www.diodes.com april 2015 ? diodes incorporated d mp2021ufdf advance information t , ambient temperature (c) figure 7 gate threshold variation vs. ambient tempe rature a v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th) 0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d v , source-drain voltage (v) figure 8 diode forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s 0 2 4 6 8 10 12 t = 85 c a 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 125 c a t = 150 c a t = -55 c a t = 25 c a c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 9 ypical junction capacitance ds 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c oss c rss f = 1mhz c iss q , total gate charge (nc) figure 10 gate-charge characteristics g v , g a t e - s o u r c e v o l t a g e ( v ) gs 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 v = -15v i = -4a ds d v , drain-source voltage (v) figure 11 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = -4.5v single pulse gs dut on 1 * mrp board 0.01 0.1 1 10 100 0.01 0.1 1 10 100
dmp2021ufdf document number: ds37195 rev. 3 - 2 5 of 7 www.diodes.com april 2015 ? diodes incorporated d mp2021ufdf advance information t1, pulse duration time (sec) figure 12 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.5 d = 0.9 d = 0.7 r (t) = r(t) * r thja thja r = 172c/w thja duty cycle, d = t1/ t2
dmp2021ufdf document number: ds37195 rev. 3 - 2 6 of 7 www.diodes.com april 2015 ? diodes incorporated d mp2021ufdf advance information package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. u - dfn2020 - 6 (type f) dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 - - 0.15 b 0.25 0.35 0.30 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 d3 0.33 0.43 0.38 e 0.65 bsc e2 0.863 bsc e 1.95 2.05 2.00 e2 1.05 1.25 1.15 e3 0.65 0.75 0.70 l 0.225 0.325 0.275 z 0.20 bsc z1 0.110 bsc all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. dimensions value (in mm) c 0.650 x 0.400 x1 0.480 x2 0.950 x3 1.700 y 0.425 y1 0.800 y2 1.150 y3 1.450 y4 2.300 d d2 e e b l e2 a a3 seating plane a1 z(4x) e2 e3 d3 z1 pin1 y4 y2 y x c x3 y1 x1 x2 y3
dmp2021ufdf document number: ds37195 rev. 3 - 2 7 of 7 www.diodes.com april 2015 ? diodes incorporated d mp2021ufdf advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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